High-performance top-gate carbon nanotube field-effect transistors and complementary metal-oxide-semiconductor inverters realized by controlling interface charges

Applied Physics Express

Volumn 3, Issue 10, 2010, Pages

  Moriyama, Naoki ^a   Ohno, Yutaka ^a   Suzuki, Kosuke ^a   Kishimoto, Shigeru ^a   Mizutani, Takashi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AIR-STABLE; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CMOS DEVICES; CMOS INVERTERS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; CONTROLLING INTERFACES; GATE INSULATOR; HIGH VOLTAGE GAIN; INTERFACE CHARGE; NOISE MARGINS; SI CMOS; TOP-GATE;

CMOS INTEGRATED CIRCUITS; DIELECTRIC DEVICES; FIELD EFFECT TRANSISTORS; NANOSENSORS;

SINGLE-WALLED CARBON NANOTUBES (SWCN);

EID: 78549237433     PISSN: 18820778     EISSN: 18820786     Source Type: Journal    
DOI: 10.1143/APEX.3.105102     Document Type: Article

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