SCOPUS 정보 검색 플랫폼

Volumn 113, Issue 18, 2013, Pages

Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors

(10) Noh, Ji Young a,b Kim, Hanchul a Nahm, Ho Hyun b Kim, Yong Sung b,c Hwan Kim, Dae d Ahn, Byung Du e Lim, Jun Hyung e Hee Kim, Gun e Lee, Je Hun e Song, Junho e

a Sookmyung Women's University (South Korea)

b Korea Research Institute of Standards and Science (South Korea)

c University of Science and Technology (UST) (South Korea)

d Kookmin University (South Korea)

e Samsung Display Co (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATION COMPOSITION; COMPOSITION RATIO; CONDUCTION-BAND MINIMUM; DENSITY-FUNCTIONAL THEORY CALCULATIONS; ELECTRON EFFECTIVE MASS; IN-SN-ZN-O; SN RATIO; ZN ATOMS;

AMORPHOUS SEMICONDUCTORS; DENSITY FUNCTIONAL THEORY; ELECTRONIC STRUCTURE; INDIUM; POSITIVE IONS; ZINC;

TIN;

EID: 84878102522 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.4803706 Document Type: Article

Times cited : (70)

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