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Volumn 98, Issue 3, 2011, Pages

Transition of dominant instability mechanism depending on negative gate bias under illumination in amorphous In-Ga-Zn-O thin film transistor

(6) Oh, Himchan a Yoon, Sung Min a Ryu, Min Ki a Hwang, Chi Sun a Yang, Shinhyuk a Park, Sang Hee Ko a

a Electronics and Telecommunications Research Institute (ETRI) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DOMINANT MECHANISM; GATE BIAS; GATE BIAS DEPENDENCE; INSTABILITY MECHANISMS; INSTABILITY MODES; NEGATIVE BIAS INSTABILITIES; NEGATIVE GATE; THRESHOLD VOLTAGE SHIFTS;

AMORPHOUS FILMS; ELECTRON TRAPS; GALLIUM; OXYGEN; OXYGEN VACANCIES; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

STABILITY;

EID: 79251542694 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3540500 Document Type: Article

Times cited : (99)

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