SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 389-395

Ge gate stacks based on Ge oxide interfacial layers and the impact on MOS device properties

(3) Takagi, Shinichi a Zhang, Rui a Takenaka, Mitsuru a

a UNIVERSITY OF TOKYO (Japan)

Author keywords

Germanium; Interface; Interface state density; Mobility; MOSFETs

Indexed keywords

DEVICE PROPERTIES; GATE STACK FORMATION; GATE STACK TECHNOLOGY; HIGH ELECTRON MOBILITY; INTERFACE QUALITY; INTERFACE STATE DENSITY; MOSFETS; OXYGEN PERMEABILITY;

ALUMINUM; CARRIER MOBILITY; ELECTRON MOBILITY; HAFNIUM OXIDES; INTERFACE STATES; INTERFACES (MATERIALS); LOGIC GATES; MOSFET DEVICES; OXYGEN; ULTRATHIN FILMS;

GERMANIUM;

EID: 84877864987 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.04.034 Document Type: Article

Times cited : (34)

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