Drive-current enhancement in Ge n-Channel MOSFET using laser annealing for source/drain activation

IEEE Electron Device Letters

Volumn 27, Issue 9, 2006, Pages 728-730

  Zhang, Qingchun ^a   Huang, Jidong ^a   Wu, Nan ^a   Chen, Guoxin ^a   Hong, Minghui ^a   Bera, L K ^b   Zhu, Chunxaing ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MICROELECTRONICS   (Singapore)

Author keywords

Germanium; High gate dielectric; Laser annealing (LA); MOSFET

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CURRENTS; GATES (TRANSISTOR); GERMANIUM; LASER APPLICATIONS; RAPID THERMAL ANNEALING; THRESHOLD VOLTAGE;

DOPANT-ACTIVATION; LASER ANNEALING (LA); SOURCE/DRAIN (S/D) REGIONS;

MOSFET DEVICES;

EID: 33748485611     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2006.880655     Document Type: Article

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