SCOPUS 정보 검색 플랫폼

Physical Review Letters

Volumn 110, Issue 17, 2013, Pages

Optical emission of a strained direct-band-gap ge quantum well embedded inside ingaas alloy layers

(7) Pavarelli, N a,b Ochalski, T J a,b Murphy Armando, F a Huo, Y c Schmidt, M a Huyet, G a,b Harris, J S c

a UNIVERSITY COLLEGE CORK (Ireland)

b Department of Chemistry (Ireland)

c Stanford University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND OFFSETS; CARRIER CONFINEMENTS; EMISSION DYNAMICS; GE QUANTUM WELL; INGAAS ALLOYS; OPTICAL EMISSIONS;

CERIUM ALLOYS; CHEMICAL BONDS; ELECTRONEGATIVITY; ENERGY GAP; LIGHT EMISSION; OPTICAL PROPERTIES; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS;

GERMANIUM;

EID: 84877757754 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.177404 Document Type: Article

Times cited : (27)

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