Electroluminescence from Ge on Si substrate at room temperature

Applied Physics Letters

Volumn 95, Issue 9, 2009, Pages

  Hu, Weixuan ^a   Cheng, Buwen ^a   Xue, Chunlai ^a   Xue, Haiyun ^a   Su, Shaojian ^a   Bai, Anqi ^a   Luo, Liping ^a   Yu, Yude ^a   Wang, Qiming ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FORWARD BIAS VOLTAGE; GE/SI HETEROJUNCTION; RADIATIVE LIFETIME; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; SCATTERING RATES; SI SUBSTRATES; SILICON-BASED; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION;

DISTILLATION; ELECTROLUMINESCENCE; GERMANIUM; HETEROJUNCTIONS; LIGHT EMISSION; LIGHT EMITTING DIODES; PHYSICAL OPTICS; SILICON; VACUUM; VACUUM DEPOSITION;

LIGHT;

EID: 69949130146     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3216577     Document Type: Article

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