Time-resolved photoluminescence of type-II Ga(As)Sb/GaAs quantum dots embedded in an InGaAs quantum well

Nanotechnology

Volumn 19, Issue 29, 2008, Pages

  Tatebayashi, J ^a   Liang, B L ^a   Laghumavarapu, R B ^b   Bussian, D A ^c   Htoon, H ^c   Klimov, V ^c   Balakrishnan, G ^a   Dawson, L R ^b   Huffaker, D L ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b UNIVERSITY OF NEW MEXICO   (United States)

^c LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARSENIC COMPOUNDS; ATOMS; ELECTRON GAS; ELECTRONS; LIGHT EMISSION; LUMINESCENCE; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTOLUMINESCENCE; QUANTUM ELECTRONICS; SEMICONDUCTING CADMIUM TELLURIDE; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

BAND ALIGNMENTS; BAND FILLINGS; BLUE SHIFTING; CARRIER DYNAMICS; DECAY TIME; EXCITATION DENSITIES; OPTICAL (PET) (OPET); PHOTOLUMINESCENCE (PL); PHOTOLUMINESCENCE (PL) MEASUREMENTS; QUANTUM DOT (CO); QUANTUM DOTS (QDS); QUANTUM WELLS; TIME-RESOLVED; TIME-RESOLVED PHOTOLUMINESCENCE (TRPL); TRANSITION (JEL CLASSIFICATIONS:E52 ,E41 ,E31); TWO DIMENSIONAL ELECTRON GAS (2DEG);

SEMICONDUCTOR QUANTUM DOTS;

QUANTUM DOT;

ARTICLE; ELECTRON; EXCITATION AND STIMULATION; LOW TEMPERATURE; MEASUREMENT; PHOTOLUMINESCENCE; PRIORITY JOURNAL; TWO DIMENSIONAL ELECTROPHORESIS;

EID: 47249108029     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/29/295704     Document Type: Article

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