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Volumn 101, Issue 23, 2012, Pages

Competitive carrier interactions influencing the emission dynamics of GaAsSb-capped InAs quantum dots

(8) Pavarelli, N a,b Ochalski, T J a,b Liu, H Y c Gradkowski, K a,b Schmidt, M a Williams, D P a,b Mowbray, D J d Huyet, G a,b

a UNIVERSITY COLLEGE CORK (Ireland)

b Department of Chemistry (Ireland)

c UNIVERSITY COLLEGE LONDON (United Kingdom)

d UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER INTERACTIONS; COMPLEX EMISSIONS; EMISSION DYNAMICS; EXCITATION REGIME; INAS QUANTUM DOTS; INAS/GAAS QUANTUM DOTS; PEAK POSITION; TIME-RESOLVED PHOTOLUMINESCENCE;

DYNAMICS; INDIUM ARSENIDE; NUCLEAR PHYSICS; OPTICAL PROPERTIES; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS;

SEMICONDUCTING GALLIUM;

EID: 84870900471 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4769431 Document Type: Article

Times cited : (6)

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