SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 109, Issue 11, 2011, Pages

Giant enhancement of n-type carrier mobility in highly strained germanium nanostructures

(2) Murphy Armando, F a Fahy, S b

a UNIVERSITY COLLEGE CORK (Ireland)

b UNIVERSITY COLLEGE CORK (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP SEMICONDUCTORS; CARRIER SCATTERING; CMOS DEVICES; DEFORMATION POTENTIAL; FIRST-PRINCIPLES; GERMANIUM NANOSTRUCTURES; HIGHLY STRAINED; LOW TEMPERATURES; MOBILITY ENHANCEMENT; NANOSCALE STRUCTURE; PHOTONIC APPLICATION; SECOND ORDERS; SI-BASED; STRAINED-GE;

ELECTRON MOBILITY; ELECTRONIC STRUCTURE; LANDFORMS; NANOSTRUCTURES; PHONONS; SEMICONDUCTING SILICON; STRAIN;

GERMANIUM;

EID: 79959436438 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3590334 Document Type: Article

Times cited : (48)

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