Electroluminescence from strained germanium membranes and implications for an efficient Si-compatible laser

Applied Physics Letters

Volumn 100, Issue 13, 2012, Pages

  Nam, Donguk ^a   Sukhdeo, David ^a   Cheng, Szu Lin ^b   Roy, Arunanshu ^a   Chih Yao Huang, Kevin ^a   Brongersma, Mark ^a   Nishi, Yoshio ^a   Saraswat, Krishna ^a  

^a Stanford University   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CENTER WAVELENGTH; DIRECT BAND GAP; ELECTRICAL MEASUREMENT; FINITE-DIFFERENCE TIME-DOMAIN SIMULATION; HIGHLY STRAINED; ON-OFF RATIO; P-N JUNCTION; RED SHIFT; ROOM TEMPERATURE; STRAINED-GE; TIGHT BINDING;

FINITE DIFFERENCE TIME DOMAIN METHOD; GERMANIUM; LIGHT EMITTING DIODES;

ELECTROLUMINESCENCE;

EID: 84859524658     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3699224     Document Type: Article

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