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Applied Physics Letters

Volumn 98, Issue 10, 2011, Pages

Biaxial tensile strain effects on photoluminescence of different orientated Ge wafers

(6) Lan, H S a Chan, S T a Cheng, T H a Chen, C Y a Jan, S R a Liu, C W a

a NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL TENSILE STRAIN; DENSITY OF STATE; DIRECT RECOMBINATION; DIRECT TRANSITION; ELECTRON POPULATION; ENERGY DIFFERENCES; GE WAFER; L-VALLEY; QUASI-FERMI LEVEL;

GERMANIUM; LANDFORMS; PHOTOLUMINESCENCE;

TENSILE STRAIN;

EID: 79952632440 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3562589 Document Type: Article

Times cited : (22)

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