Processing and electrical characterization of metal-oxide-semiconductor structures prepared by DBSA-Doped TiO2 nanoparticles

Current Nanoscience

Volumn 9, Issue 1, 2013, Pages 39-45

  Sönmezoglu, Savaş ^a  

^a KARAMANOGLU MEHMETBEY UNIVERSITY   (Turkey)

Author keywords

Interface states density; Metal oxide semiconductor structures; Nanoparticles; Sol gel method

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; DIELECTRIC DEVICES; INTERFACE STATES; MAGNETIC SEMICONDUCTORS; METAL NANOPARTICLES; METALS; MOS DEVICES; NANOCOMPOSITES; NANOPARTICLES; OXIDE MINERALS; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; SOL-GEL PROCESS; SOL-GELS; SYNTHESIS (CHEMICAL); TIO2 NANOPARTICLES; TITANIUM DIOXIDE; TRANSISTORS; X RAY DIFFRACTION;

CAPACITANCE VOLTAGE; ELECTRICAL CHARACTERISTIC; ELECTRICAL CHARACTERIZATION; INTERFACE STATES DENSITY; METAL OXIDE SEMICONDUCTOR STRUCTURE; METAL OXIDE SEMICONDUCTOR STRUCTURES; STRUCTURAL AND MORPHOLOGICAL PROPERTIES; TITANIUM DIOXIDES (TIO2);

OXIDE SEMICONDUCTORS;

METAL OXIDE; NANOMATERIAL; NANOPARTICLE; TITANIUM DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; DENSITY; ELECTRIC CAPACITANCE; ELECTRIC POTENTIAL; IONIZATION; PARTICLE SIZE; PRIORITY JOURNAL; ROOM TEMPERATURE; SEMICONDUCTOR; SURFACE PROPERTY; SYNTHESIS; X RAY DIFFRACTION;

EID: 84875936325     PISSN: 15734137     EISSN: 18756786     Source Type: Journal    
DOI: 10.2174/1573413711309010009     Document Type: Article

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