Electrical characteristics of an organic thin copolymer/p-Si Schottky barrier diode

Thin Solid Films

Volumn 518, Issue 15, 2010, Pages 4375-4379

  Sönmezoǧlu, Savaş ^a   Şenkul, Sevilay ^a   Taş, Recep ^a   Çankaya, Güven ^a   Can, Muzaffer ^a  

^a GAZIOSMANPASA UNIVERSITY   (Turkey)

Author keywords

Ideality factor; Interface state density; Organic thin copolymer; Schottky barrier height; Series resistance

Indexed keywords

BARRIER HEIGHTS; CURRENT VOLTAGE; ELECTRICAL CHARACTERISTIC; I-V BEHAVIOR; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATE DENSITY; INTERFACIAL LAYER; IV CHARACTERISTICS; ROOM TEMPERATURE; SCHOTTKY BARRIER HEIGHTS; SERIES RESISTANCES; SI SUBSTRATES; THIN MATERIALS;

ACETONITRILE; ANILINE; COPOLYMERIZATION; DIODES; ELECTRIC PROPERTIES; ORGANIC POLYMERS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR METAL BOUNDARIES; SILICON; THIOPHENE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 77953139879     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.01.042     Document Type: Article

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