Influence of Al2O3 dielectrics on the trap-depth profiles in MOS devices investigated by the charge-pumping method

IEEE Transactions on Electron Devices

Volumn 51, Issue 12, 2004, Pages 2252-2255

  Jakschik, Stefan ^a   Avellan, Alejandro ^a   Schroeder, Uwe ^a   Bartha, Johann W ^b  

^a INFINEON TECHNOLOGIES AG   (Germany)

^b DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Charge carrier processes; Charge measurement; Dielectric materials

Indexed keywords

ALUMINA; CHARGE CARRIERS; DIELECTRIC MATERIALS; ELECTRIC CHARGE MEASUREMENT; ELECTRON TRAPS; ELECTRONIC DENSITY OF STATES; GRAIN BOUNDARIES; INTERFACES (MATERIALS); PERMITTIVITY; SILICA; SILICON NITRIDE;

CHARGE CARRIER PROCESSES; CHARGE TRAPPING; TRAP DENSITY DEPTH PROFILING;

MOSFET DEVICES;

EID: 10644263639     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2004.839878     Document Type: Article

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