Modelization and characterization of Au/InSb/InP Schottky systems as a function of temperature

Materials Science and Engineering B

Volumn 55 B55, Issue 3, 1998, Pages 162-168

  Akkal, B ^a   Benamara, Z ^a   Boudissa, A ^a   Bouiadjra, N Bachir ^a   Amrani, M ^a   Bideux, L ^b   Gruzza, B ^a  

^a UNIVERSITY OF SIDI BEL ABBES   (Algeria)

^b UNIVERSITÉ CLERMONT AUVERGNE   (France)

Author keywords

Au InP(n) schottky diode

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GOLD; INTERFACES (MATERIALS); MOLECULAR STRUCTURE; MONOLAYERS; SEMICONDUCTING FILMS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DOPING; SURFACE STRUCTURE; THERMAL EFFECTS;

INDIUM ANTIMONIDE;

SCHOTTKY BARRIER DIODES;

EID: 0000559766     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/s0921-5107(98)00168-8     Document Type: Article

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