Electrical characteristics of DNA-based metal-insulator-semiconductor structures

Journal of Applied Physics

Volumn 107, Issue 12, 2010, Pages

  Sonmezoglu S ^a,c   Sönmezoǧlu, Ö Ateş ^a   Cankaya G ^a   Yildirim, A ^b   Serin, N ^c  

^a GAZIOSMANPASA UNIVERSITY   (Turkey)

^b KARAMANOGLU MEHMETBEY UNIVERSITY   (Turkey)

^c ANKARA UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BIAS DEPENDENCE; CAPACITANCE VOLTAGE; CURRENT VOLTAGE; DNA FILMS; ELECTRICAL CHARACTERISTIC; ENERGY DISTRIBUTIONS; FORWARD BIAS; HIGH QUALITY; IDEALITY FACTORS; INORGANIC SEMICONDUCTORS; INTERFACE STATE DENSITY; IV CHARACTERISTICS; METAL INSULATOR SEMICONDUCTOR STRUCTURES; MOLECULAR FILMS; N TYPE SILICON; OPTICAL ABSORBANCE; OPTICAL BANDS; RECTIFYING BEHAVIORS; ROOM TEMPERATURE; SANDWICH DEVICES; SOLUTION-PROCESSING; SPACE CHARGE REGIONS;

DISTILLATION; DNA; GENES; GOLD; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77954186434     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3447985     Document Type: Article

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