Interface state density analyzing of Au/TiO2(rutile)/n-Si Schottky barrier diode

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 1257-1260

  Altuntas, H ^a   Bengi, A ^a   Asar, T ^a   Aydemir, U ^a   Sarikavak, B ^a   Ozen, Y ^a   Altindal, S ^a   Ozcelik, S ^a  

^a GAZI UNIVERSITY   (Turkey)

Author keywords

Au TiO2 n Si SBDs; Barrier height; I V characteristics; Nss

Indexed keywords

BARRIER HEIGHTS; CURRENT VOLTAGE; DISTRIBUTION PROFILES; I-V MEASUREMENTS; IDEALITY FACTORS; INTERFACE STATE; INTERFACE STATE DENSITY; IV CHARACTERISTICS; REACTIVE MAGNETRON SPUTTERING; ROOM TEMPERATURE; RUTILE PHASE; SCHOTTKY DIODES; SERIES RESISTANCES; SI SUBSTRATES; SOL-GEL METHODS; TIO; ZERO-BIAS;

CURRENT VOLTAGE CHARACTERISTICS; DIODES; GELS; OXIDE MINERALS; SEMICONDUCTING SILICON COMPOUNDS; SILICON; SOL-GEL PROCESS;

SCHOTTKY BARRIER DIODES;

EID: 77954268532     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3331     Document Type: Conference Paper

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