Schottky contacts on passivated GaAs(1 0 0) surfaces: Barrier height and reactivity

Applied Surface Science

Volumn 234, Issue 1-4, 2004, Pages 341-348

  Kampen, T ^a,c   Schuller A ^a   Zahn, D R T ^a   Biel, Blanca ^b   Ortega, José ^b   Pérez, Rubén ^b   Flores, Fernando ^b  

^a CHEMNITZ UNIVERSITY OF TECHNOLOGY   (Germany)

^b UNIVERSIDAD AUTÓNOMA DE MADRID   (Spain)

^c FRITZ HABER INSTITUT DER MAX PLANCK GESELLSCHAFT   (Germany)

Author keywords

GaAs; Metal semiconductor contacts; Schottky contacts

Indexed keywords

FERMI LEVEL; INTERFACES (MATERIALS); MOLECULAR DYNAMICS; PASSIVATION; PHOTOEMISSION; SEMICONDUCTING GALLIUM ARSENIDE; SPECTROSCOPY;

BARRIER HEIGHT; CHALCOGEN; ELECTRON AFFINITY; SCHOTTKY CONTACTS;

SCHOTTKY BARRIER DIODES;

EID: 3342904467     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.05.257     Document Type: Conference Paper

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