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Current Applied Physics

Volumn 12, Issue 5, 2012, Pages 1372-1377

High performance GaAs metal-insulator-semiconductor devices using TiO 2 as insulator layer

(2) Sönmezoglu, Savaş a Akn, Seçkin a

a KARAMANOGLU MEHMETBEY UNIVERSITY (Turkey)

Author keywords

Current voltage temperature; GaAs semiconductor; Gaussian distribution; Metal insulator semiconductor

Indexed keywords

BARRIER HEIGHT INHOMOGENEITY; BARRIER HEIGHTS; CURRENT-VOLTAGE MEASUREMENTS; CURRENT-VOLTAGE-TEMPERATURE; DEVICE TECHNOLOGIES; ELECTRICAL CHARACTERISTIC; GAAS; GAAS SUBSTRATES; GAUSSIANS; IDEALITY FACTORS; INHOMOGENEITIES; INSULATOR LAYER; METAL INSULATORS; METAL SEMICONDUCTOR INTERFACE; METAL-INSULATOR SEMICONDUCTOR DEVICES; METAL-INSULATOR-SEMICONDUCTORS; POTENTIAL MODEL; RICHARDSON CONSTANT; RICHARDSON PLOT; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; THEORETICAL VALUES; TIO; ZERO-BIAS;

GALLIUM ARSENIDE; GAUSSIAN DISTRIBUTION; MIM DEVICES; MIS DEVICES; SEMICONDUCTING GALLIUM; TITANIUM DIOXIDE;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84861575579 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2012.03.030 Document Type: Article

Times cited : (29)

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