Low voltage driven, stable solution-processed zinc-tin-oxide TFT with HfOy and AlOx stack gate dielectric

ECS Solid State Letters

Volumn 1, Issue 2, 2012, Pages

  Kim, Youn Goo ^a   Avis, Christophe ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT MOBILITIES; MAXIMUM TEMPERATURE; POSITIVE GATE BIAS; SOLUTION-PROCESSED; STACK GATE DIELECTRICS; STRETCHED EXPONENTIAL; SUBTHRESHOLD SWING; ZINC-TIN-OXIDE (ZTO);

GATE DIELECTRICS; HAFNIUM OXIDES; OXIDES; TIN; ZINC;

TIN OXIDES;

EID: 84874829876     PISSN: 21628742     EISSN: 21628750     Source Type: Journal    
DOI: 10.1149/2.017202ssl     Document Type: Article

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