Optimization of the fabrication process for ZnO thin-film transistors with HfO2 gate dielectrics

Japanese Journal of Applied Physics

Volumn 48, Issue 3, 2009, Pages 031103-

  Chen, Henry J H ^a   Yeh, Barry B L ^a  

^a NATIONAL CHI NAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING CONDITION; ELECTRICAL CHARACTERISTIC; FABRICATION PROCESS; FIELD-EFFECT MOBILITIES; HIGH-K GATE DIELECTRICS; LOW TEMPERATURES; ON/OFF RATIO; POST ANNEALING; SUBTHRESHOLD SLOPE; ZN ATOMS; ZNO; ZNO THIN FILM;

ANNEALING; GATES (TRANSISTOR); HAFNIUM COMPOUNDS; METALLIC FILMS; MOS CAPACITORS; OPTICAL FILMS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING ZINC COMPOUNDS; THIN FILM TRANSISTORS; THIN FILMS; ZINC; ZINC OXIDE;

GATE DIELECTRICS;

EID: 67650844749     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.031103     Document Type: Article

References (15)

1. U. Ozgur, Y. I. Alivov, C. Liu, A. Teke, M. A. Reshchikov, S. Dogan, V. Avrutin, S. J. Cho, and H. Morkoc: J. Appl. Phys. 98 (2005) 041301.
2. H. J. H. Chen, B. B. L. Yeh, H. C. Pan, and J. S. Chen: Electron. Lett. 44 (2008) 186.
3. E. M. C. Fortunato, P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, R. F. P. Matins, and L. M. N. Pereira: Appl. Phys. Lett. 85 (2004) 2541.
4. S. J. Lim, S. Kwon, and H. Kim: Thin Solid Films 516 (2008) 1523.
5. R. Navamathavan, E. J. Yang, J. H. Lim, D. K. Hwang, J. Y. Oh, J. H. Yang, J. H. Jang, and S. J. Park: J. Electrochem. Soc. 153 (2006) G385.
6. H. H. Hsieh and C. C. Wu: Appl. Phys. Lett. 89 (2006) 041109.
7. P. K. Shin, Y. Aya, T. Ikegami, and K. Ebihara: Thin Solid Films 516 (2008) 3767.
8. H. H. Cheng, C. F. Chen, and C. Y. Tsay: Appl. Phys. Lett. 90 (2007) 012113.
9. G. D. Wilk, R. M. Wallace, and J. M. Anthony: J. Appl. Phys. 89 (2001) 5243.
10. K. Lee, J. H. Kim, S. Im, C. S. Kim, and H. K. Baik: Appl. Phys. Lett. 89 (2006) 133507.
11. H. H. Hsieh and C. C. Wu: Appl. Phys. Lett. 91 (2007) 013502.
12. H. Yabuta, M. Sano, K. Abe, T. Aiba, T. Den, H. Kumomi, K. Nomura, T. Kamiya, and H. Hosono: Appl. Phys. Lett. 89 (2006) 112123.
13. Z. Nian, K. L. Ng, H. Wong, M. C. Poon, and C. W. Kok: Proc. IEEE Conf. Electron Devices and Solid-State Circuit, 2003, p. 431.
14. M. N. Jones, Y. W. Kwon, and D. P. Norton: Appl. Phys. A 81 (2005) 285.
15. K. L. Ng, N. Zhan, C. W. Kok, M. C. Poon, and H. Wong: Microelectron. Reliab. 43 (2003) 1289.