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Applied Physics Letters

Volumn 98, Issue 12, 2011, Pages

Low-voltage ZnO thin-film transistors based on Y2 O3 and Al2 O3 high- k dielectrics deposited by spray pyrolysis in air

(5) Adamopoulos, George a Thomas, Stuart a Bradley, Donal D C a McLachlan, Martyn A a Anthopoulos, Thomas D a

a IMPERIAL COLLEGE LONDON (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD-EFFECT; HIGH-K DIELECTRIC; IMPEDANCE SPECTROSCOPY; LOW-LEAKAGE CURRENT; LOW-VOLTAGE; ON/OFF RATIO; OXIDE ELECTRONICS; POLYCRYSTALLINE; PROCESSING METHOD; UV-VISIBLE ABSORPTION SPECTROSCOPY; ZNO; ZNO TRANSISTORS;

ABSORPTION SPECTROSCOPY; ALUMINUM; AMORPHOUS MATERIALS; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ELECTRON MOBILITY; LEAKAGE CURRENTS; THIN FILM TRANSISTORS; ZINC OXIDE;

SPRAY PYROLYSIS;

EID: 79953885624 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3568893 Document Type: Article

Times cited : (128)

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