Characterization of unpassivated-solution-processed zinc-tin oxide thin film transistors

Japanese Journal of Applied Physics

Volumn 50, Issue 1 PART 3, 2011, Pages

  Avis, Christophe ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; BOTTOM CONTACTS; NEGATIVE BIAS; OFF-CURRENT; POSITIVE BIAS; SOLUTION-PROCESSED; THRESHOLD SHIFTS; WATER MOLECULE;

DRAIN CURRENT; GAS ADSORPTION; OXYGEN; TIN; TIN OXIDES; ZINC;

THIN FILM TRANSISTORS;

EID: 79955130168     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.50.01BG03     Document Type: Conference Paper

References (20)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono: Nature 432 (2004)488.
2. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono: Science 300 (2003) 1269.
3. T. Kamiya, K. Nomura, and H. Hosono: J. Disp. Technol. 5 (2009) 273.
4. K. Nomura, T. Kamiya, M. Hirano, and H. Hosono: Appl. Phys. Lett. 95 (2009) 013502.
5. M. Kimura, T. Nakanishi, K. Nomura, T. Kamiya, and H. Hosono: Appl. Phys. Lett. 92 (2008) 133512.
6. M. E. Lopes, H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira: Appl. Phys. Lett. 95 (2009) 063502.
7. M. K. Jayaraja, K. J. Saji, K. Nomura, T. Kamiya, and H. Hosono: J. Vac. Sci. Technol. B 26 (2008) 495.
8. H. Q. Chiang, J. F. Wager, R. L. Hoffman, J. Jeong, and D. A. Keszler: Appl. Phys. Lett. 86 (2005) 013503.
9. P. Görrn, P. Hölzer, T. Riedl, W. Kowalsky, J. Wang, T. Weimann, P. Hinze, and S. Kipp: Appl. Phys. Lett. 90 (2007) 063502.
10. R. L. Hoffman: Solid-State Electron. 50 (2006) 784.
11. P. T. Erslev, E. S. Sundholm, R. E. Presley, D. Hong, J. F. Wager, and J. D. Cohen: Appl. Phys. Lett. 95 (2009) 192115.
12. J.-S. Park, T.-W. Kim, D. Stryakhilev, J.-S. Lee, S.-G. An, Y.-S. Pyo, D.-B. Lee, Y. G. Mo, D.-U. Jin, and H. K. Chung: Appl. Phys. Lett. 95 (2009) 013503.
13. S.-J. Liu, H.-W. Fang, S.-H. Su, C.-H. Li, J.-S. Cherng, J.-H. Hsieh, and J.-Y. Juang: Appl. Phys. Lett. 94 (2009) 092504.
14. J.-H. Lee, D.-H. Kim, D.-J. Yang, S.-Y. Hong, K.-S. Yoon, P.-S. Hong, C.-O. Jeong, H.-S. Park, S. Y. Kim, S. K. Lim, S. S. Kim, K.-S. Son, T.-S. Kim, J.-Y. Kwon, and S.-Y. Lee: SID Symp. Dig. Tech. Pap. 39 (2008) 625.
15. S. K. Park, Y.-H. Kim, H.-S. Kim, and J.-I. Han: Electrochem. Solid-State Lett. 12 (2009) H256.
16. Y. Jeong, C. Bae, D. Kim, K. Song, K. Woo, H. Shin, G. Cao, and J. Moon: Appl. Mater. Interfaces 2 (2010) 611.
17. S.-J. Seo, C. G. Choi, Y. H. Hwang, and B.-S. Bae: J. Phys. D 42 (2009) 035106
18. Y.-J. Chang, D.-H. Lee, G. S. Herman, and C.-H. Chang: Electrochem.
19. Y. Jeong, K. Song, D. Kim, C. Y. Koo, and J. Moon: J. Electrochem. Soc. 156 (2009) H808.
20. J.-S. Park, J. K. Jeong, H.-J. Chung, Y.-G. Mo, and H. D. Kim: Appl. Phys. Lett. 92 (2008) 072104.