Low-voltage poly-si TFTs with solution-processed aluminum oxide gate dielectric

Electrochemical and Solid-State Letters

Volumn 14, Issue 8, 2011, Pages

  Kang, In ^a   Avis, Christophe ^a   Kang, Dong Han ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM OXIDES; FIELD-EFFECT MOBILITIES; GATE VOLTAGE SWING; LOW TEMPERATURE POLYCRYSTALLINE SILICON; LOW-VOLTAGE; OXYGEN PLASMA TREATMENTS; POLY-SI TFTS; SOLUTION-PROCESSED; STAGE RING OSCILLATORS; SUPPLY VOLTAGES; SWITCHING SPEED;

ALUMINUM; GATE DIELECTRICS; GATES (TRANSISTOR); OXIDES; PLASMA APPLICATIONS; POLYSILICON; SOL-GEL PROCESS;

THIN FILM TRANSISTORS;

EID: 79959282282     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3594094     Document Type: Article

References (17)

1. T. Aoyama, K. Ogawa, Y. Mochizuki, and N. Konishi, IEEE Trans. Electron Devices, 43, 701 (1996). 10.1109/16.491245
2. M. W. Ma, C. Y. Chen, W. C. Wu, C. J. Su, K. H. Kao, T. S. Chao, and T. F. Lei, IEEE Trans. Electron Devices, 55, 1153 (2008). 10.1109/TED.2008.919710 (Pubitemid 351689507)
3. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001). 10.1063/1.1361065
4. J. W. Lim and S. J. Yun, Electrochem. Solid-State Lett., 7, F45 (2004). 10.1149/1.1756541
5. P. K. Park, E. S. Cha, and S. W. Kang, Appl. Phys. Lett., 90, 232906 (2007). 10.1063/1.2746416 (Pubitemid 46960304)
6. M. Ritala, M. Leskela, J. P. Dekker, C. Mutsaers, P. J. Soininen, and J. Skarp, Chem. Vap. Deposition, 5, 7 (1999). 10.1002/(SICI)1521-3862(199901)5: 1><1.0.CO;2-X
7. C. G. Choi, S. J. Seo, and B. S. Bae, Electrochem. Solid-State Lett., 11, H7 (2008). 10.1149/1.2800562 (Pubitemid 350115965)
8. Y. H. Hwang, J. H. Jeon, S. J. Seo, and B. S. Bae, Electrochem. Solid-State Lett., 12, H336 (2009). 10.1149/1.3156830
9. J. C. Kim, J. H. Choi, S. S. Kim, K. M. Kim, and J. Jang, Appl. Phys. Lett., 83, 5068 (2003). 10.1063/1.1633974
10. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, in Handbook of X-Ray Photoelectron Spectroscopy, J. Chastain, and, R. C. King, Editors, Physical Electronics, Inc., Eden Prairie, Minnesota (1995).
11. J. C. Kim, J. H. Choi, S. S. Kim, and J. Jang, IEEE Electron Device Lett., 25, 182 (2004). 10.1109/LED.2004.824844
12. T. N. Nguyen, S. W. Jung, V. D. Nguyen, and J. Yi, J. Phys. D: Appl. Phys., 43, 105406 (2010). 10.1088/0022-3727/43/10/105406
13. C. F. Weng, T. C. Chang, F. Y. Jian, S. C. Chen, J. Lu, and I. C. Lu, J. Electrochem. Soc., 157, H22 (2010). 10.1149/1.3244596
14. S. H. Jung, W. J. Nam, J. H. Lee, J. H. Jeon, and M. K. Han, IEEE Electron Device Lett., 26, 23 (2005). 10.1109/LED.2004.839217 (Pubitemid 40145978)
15. F. C. Hsu and K. Y. Chiu, IEEE J. Solid-State Circuits, 20, 314 (1985). 10.1109/JSSC.1985.1052308
16. M. N. Troccoli, A. J. Roudbari, T. Chuang, and M. K. Hatalis, Solid-State Electron., 50, 1080 (2006). 10.1016/j.sse.2006.04.035 (Pubitemid 44015815)
17. Y. D. Son, K. D. Yang, B. S. Bae, K. C. Park, and J. Jang, J. Non-Cryst. Solids, 352, 1745 (2006). 10.1016/j.jnoncrysol.2005.11.131 (Pubitemid 43816545)