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Electrochemical and Solid-State Letters

Volumn 15, Issue 4, 2012, Pages

Bias-temperature-illumination stability of aqueous solution processed fluorine doped zinc tin oxide (ZTO:F) transistor

(3) Jeon, Jun Hyuck a Hwang, Young Hwan a Bae, Byeong Soo a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC INTERFACE; FIELD-EFFECT MOBILITIES; FLUORINE-DOPED; FREE ELECTRON; PROCESS TEMPERATURE; TFT DISPLAYS; THRESHOLD VOLTAGE SHIFTS; ZINC TIN OXIDE;

DOPING (ADDITIVES); FLUORINE; SOL-GEL PROCESS; TIN; TIN OXIDES; ZINC;

THIN FILM TRANSISTORS;

EID: 84857243729 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/2.004205esl Document Type: Article

Times cited : (18)

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