A full-swing a-IGZO TFT-based inverter with a top-gate-bias-induced depletion load

IEEE Electron Device Letters

Volumn 32, Issue 8, 2011, Pages 1089-1091

  Seok, Man Ju ^a   Choi, Min Hyuk ^a   Mativenga, Mallory ^a   Geng, Di ^a   Kim, Deok Yeol ^a   Jang, Jin ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Amorphous indium gallium zinc oxide (a IGZO); depletion load; inverter; thin film transistor (TFT)

Indexed keywords

AMORPHOUS-INDIUM-GALLIUM-ZINC-OXIDE (A-IGZO); BOTTOM GATE; DEPLETION LOAD; DEPLETION MODES; FULL-SWING; INVERTER; NEGATIVE GATE VOLTAGES; NOISE MARGINS; POSITIVE BIAS; SWITCHING CHARACTERISTICS; TOP GATE;

AMORPHOUS FILMS; BIAS VOLTAGE; FIELD EFFECT TRANSISTORS; GALLIUM; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; ZINC;

THIN FILM TRANSISTORS;

EID: 79960897376     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2157798     Document Type: Article

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