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Volumn 14, Issue 2, 2011, Pages

A high performance inkjet printed zinc tin oxide transparent thin-film transistor manufactured at the maximum process temperature of 300°C and its stability test

(2) Avis, Christophe a Jang, Jin a

a Kyung Hee University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM GATE; CARRIER TRAPPING; FIELD-EFFECT MOBILITIES; GOOD STABILITY; INTERFACE REGIONS; ON/OFF RATIO; PROCESS TEMPERATURE; STABILITY TESTS; STRESS TIME; STRETCHED EXPONENTIAL; SUBSTRATE TEMPERATURE; TRANSPARENT THIN FILM TRANSISTOR; ZINC TIN OXIDE;

TIN; TIN OXIDES; ZINC;

THIN FILM TRANSISTORS;

EID: 78951480081 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3516608 Document Type: Article

Times cited : (39)

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