Effects of gate insulators on the performance of a-IGZO TFT fabricated at room-temperature

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1590-1593

  Chun, Yoon Soo ^a   Chang, Seongpil ^b   Lee, Sang Yeol ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

a IGZO; HfO2; High k; SiO2; Thin film transistor

Indexed keywords

A-IGZO; CURRENT RATIOS; GATE INSULATOR; HFO2; HIGH DIELECTRIC CONSTANTS; HIGH-K; HIGH-K GATE INSULATOR; HIGH-K OXIDES; ON-CURRENTS; ROOM TEMPERATURE; SIO2; SUBTHRESHOLD SWING;

CAPACITANCE; FIELD EFFECT TRANSISTORS; HAFNIUM OXIDES; SILICON COMPOUNDS; THIN FILM DEVICES;

THIN FILM TRANSISTORS;

EID: 79958067511     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.01.076     Document Type: Article

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