High-frequency half-bit shift register with amorphous-oxide TFT

IEEE Electron Device Letters

Volumn 31, Issue 4, 2010, Pages 320-322

  Jamshidi Roudbari, Abbas ^a   Akbar Khan, Shahrukh ^a   Hatalis, Miltiadis K ^a  

^a Lehigh University   (United States)

Author keywords

Indium Gallium Zinc Oxide (IGZO); Oxide thin film transistor (TFT); Shift register; TFTs

Indexed keywords

A-FRAMES; ACTIVE MATERIAL; ALUMINUM SOURCE; BIT-SHIFTS; CLOCK FREQUENCY; FIELD-EFFECT MOBILITIES; GATE ELECTRODES; HIGH FREQUENCY HF; HIGHER INTEGRATION; INDIUM GALLIUM ZINC OXIDE (IGZO); INDIUM GALLIUM ZINC OXIDES; RAIL-TO-RAIL; SUPPLY VOLTAGES;

AMORPHOUS FILMS; GALLIUM; INDIUM; SEMICONDUCTING ORGANIC COMPOUNDS; SHIFT REGISTERS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 77950094513     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2041181     Document Type: Article

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