Effect of AlN growth temperature on trap densities of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructure field-effect transistors

AIP Advances

Volumn 2, Issue 2, 2012, Pages

  Freedsman, Joseph J ^a   Kubo, Toshiharu ^a   Egawa, Takashi ^a  

^a NAGOYA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM NITRIDE; ALUMINUM NITRIDE; CHEMICAL ANALYSIS; DRAIN CURRENT; HETEROJUNCTIONS; III-V SEMICONDUCTORS; INDUSTRIAL CHEMICALS; JUNCTION GATE FIELD EFFECT TRANSISTORS; METAL INSULATOR BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MIS DEVICES; ORGANIC CHEMICALS; ORGANIC FIELD EFFECT TRANSISTORS; ORGANOMETALLICS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); DEVICE CHARACTERISTICS; FREQUENCY DEPENDENT; METAL ORGANIC; METAL-INSULATOR-SEMICONDUCTORS; PARALLEL CONDUCTANCE; TRAP DENSITY; TRAPPING PROPERTIES;

WIDE BAND GAP SEMICONDUCTORS;

EID: 84874090771     PISSN: None     EISSN: 21583226     Source Type: Journal    
DOI: 10.1063/1.4722642     Document Type: Article

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