Interfacial charge effects on electron transport in III-Nitride metal insulator semiconductor transistors

Applied Physics Letters

Volumn 99, Issue 16, 2011, Pages

  Hung, Ting Hsiang ^a   Esposto, Michele ^a   Rajan, Siddharth ^a  

^a The Ohio State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALGAN/GAN; CAP LAYER THICKNESS; DOMINANT MECHANISM; ELECTRON TRANSPORT; III-NITRIDE; IMPURITY SCATTERING; INTERFACE CHARGE; INTERFACIAL CHARGE; METAL-INSULATOR-SEMICONDUCTORS; TWO-DIMENSION;

ELECTRON GAS; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; MISFET DEVICES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 80155187629     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3653805     Document Type: Article

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