Current-voltage characteristics of AlN/GaN heterostructure metal insulator semiconductor diode

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 3 A, 2001, Pages 1194-1198

  Imanaga, S ^a   Nakamura, F ^a   Kawai, H ^a  

^a SONY CORPORATION   (Japan)

Author keywords

AlN; AlN GaN; Diode; GaN; Growth temperature; I V; Leakage current; MIS; Morphology

Indexed keywords

CRYSTAL STRUCTURE; CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MIM DEVICES; OHMIC CONTACTS; SEMICONDUCTOR GROWTH; THERMAL EFFECTS;

SCHOTTKY METALS;

SEMICONDUCTOR DIODES;

EID: 0035270440     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.1194     Document Type: Article

References (11)