SCOPUS 정보 검색 플랫폼

Volumn 98, Issue 16, 2011, Pages

Temperature-dependent forward gate current transport in atomic-layer-deposited Al2 O3 /AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor

(5) Liu, Z H a Ng, G I a Arulkumaran, S a Maung, Y K T a Zhou, H a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALGAN/GAN HEMTS; ATOMIC LAYER DEPOSITED; ELECTRICAL FIELD; FOWLER-NORDHEIM TUNNELING; GATE CURRENT; HIGH TEMPERATURE; LOW TEMPERATURES; METAL-INSULATOR-SEMICONDUCTORS; MIS-HEMT; SCHOTTKY-GATE; TEMPERATURE DEPENDENT; THERMIONIC FIELD EMISSION; TRANSPORT MECHANISM;

ALUMINUM; ELECTRON MOBILITY; FIELD EMISSION; GALLIUM NITRIDE; METAL INSULATOR BOUNDARIES; MIS DEVICES; SEMICONDUCTOR INSULATOR BOUNDARIES; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79955414668 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3573794 Document Type: Article

Times cited : (75)

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