Trap characterization in AlGaN/GaN HEMT by analyzing frequency dispersion in capacitance and conductance

Surface and Interface Analysis

Volumn 42, Issue 6-7, 2010, Pages 799-802

  Semra, L ^a   Telia, A ^a   Soltani, A ^b  

^a Universite Mentouri Constantine   (Algeria)

^b UNIV LILLE   (France)

Author keywords

AlGaN GaN; Equivalent circuit; HEMT; Modeling; Traps

Indexed keywords

ALGAN; ALGAN/GAN; ALGAN/GAN HEMTS; CAPTURE CROSS SECTIONS; CONDUCTANCE METHOD; ELECTRICAL MODELS; FREQUENCY DISPERSION; INTERFACE TRAP DENSITY; PARALLEL CONDUCTANCE; SERIES RESISTANCES; SOURCE CONTACT; TIME CONSTANTS; TRAP DENSITY; TRAP LEVELS; TRAP STATE;

ACTIVATION ENERGY; CAPACITANCE; DISPERSIONS;

GALLIUM NITRIDE;

EID: 77954292432     PISSN: 01422421     EISSN: 10969918     Source Type: Journal    
DOI: 10.1002/sia.3462     Document Type: Conference Paper

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