Trap behaviors in AlGaN-GaN heterostructures by C-V characterization

Solid-State Electronics

Volumn 53, Issue 11, 2009, Pages 1183-1185

  Xie, Shengyin ^a,b   Yin, Jiayun ^b   Zhang, Sen ^b,c   Liu, Bo ^b   Zhou, Wei ^a   Feng, Zhihong ^b  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b HEBEI SEMICONDUCTOR RESEARCH INSTITUTE   (China)

^c HARBIN INSTITUTE OF TECHNOLOGY   (China)

Author keywords

AlGaN GaN; Capacitance Voltage; Dispersion; Plasma treatment; Traps

Indexed keywords

ALGAN; ALGAN/GAN; C-V CHARACTERIZATION; CAPACITANCE DISPERSION; CAPACITANCE VOLTAGE; CAPACITANCE-VOLTAGE TECHNIQUES; FLUORINE PLASMA; FREQUENCY-DEPENDENT CAPACITANCE; HETEROSTRUCTURES; PINCH-OFF REGION; PLASMA TREATMENT; SIC SUBSTRATES; SIMPLIFIED MODELS; TRAP BEHAVIOR; TRAP DENSITY;

CAPACITANCE; CORUNDUM; CRYSTALS; FLUORINE; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; MERCURY (METAL); PLASMA APPLICATIONS; SEMICONDUCTING GALLIUM; SILICON CARBIDE; SURFACE DEFECTS;

DISPERSIONS;

EID: 72049128303     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2009.08.006     Document Type: Article

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