AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistor with liquid-phase-deposited barium-doped TiO 2 as a gate dielectric

IEEE Transactions on Electron Devices

Volumn 59, Issue 1, 2012, Pages 121-127

  Hu, Chih Chun ^a   Lin, Mon Sen ^a   Wu, Tsu Yi ^a   Adriyanto, Feri ^a   Sze, Po Wen ^b   Wu, Chang Luen ^c   Wang, Yeong Her ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

^c Transcom Inc   (Taiwan)

Author keywords

AlGaN GaN; barium doped TiO 2; liquid phase deposition (LPD); metal oxide semiconductor high electron mobility transistor (MOSHEMT)

Indexed keywords

ALGAN/GAN; BREAKDOWN FIELD; CURRENT COLLAPSE; ELECTRICAL CHARACTERISTIC; GAN LAYERS; GATE LEAKAGE CURRENT DENSITY; GATE PULSE; GATE VOLTAGE SWING; LIQUID PHASE DEPOSITION (LPD); LOW TEMPERATURES; MAXIMUM DRAIN CURRENT; METAL-OXIDE-SEMICONDUCTOR HIGH-ELECTRON MOBILITY TRANSISTORS; MOS STRUCTURE; N-DOPED; SIMPLE LIQUIDS; SUBTHRESHOLD SWING; TIO;

BARIUM; CURRENT DENSITY; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRON MOBILITY; GALLIUM NITRIDE; GATE DIELECTRICS; LEAKAGE CURRENTS; LIQUIDS; MOS DEVICES; OXIDE FILMS; TITANIUM DIOXIDE; TRANSISTORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84855465843     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2171690     Document Type: Article

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