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Microelectronics Reliability

Volumn 51, Issue 3, 2011, Pages 576-580

Current transport mechanisms and trap state investigations in (Ni/Au)-AlN/GaN Schottky barrier diodes

(6) Arslan, Engin a Bütün, Serkan a Şafak, Yasemin b Çakmak, Hüseyin a Yu, Hongbo a Özbay, Ekmel a

a BILKENT UNIVERSITY (Turkey)

b GAZI UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL EXPRESSIONS; APPLIED BIAS; CAPACITANCE VOLTAGE; CHARGE TRANSPORT; CONDUCTION BAND EDGE; CURRENT TRANSPORT MECHANISM; ENERGY SEPARATIONS; FIT PARAMETERS; FITTING RESULTS; FREQUENCY RANGES; FREQUENCY-DEPENDENT CAPACITANCE; HETEROJUNCTION INTERFACES; SATURATION CURRENT; SPACE CHARGE REGIONS; TEMPERATURE DEPENDENT BEHAVIOR; TEMPERATURE RANGE; TIME CONSTANTS; TRAP STATE; TRAPPING EFFECTS; TUNNELING PARAMETER;

CAPACITANCE; HETEROJUNCTIONS; SCHOTTKY BARRIER DIODES;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 79951960699 PISSN: 00262714 EISSN: None Source Type: Journal
DOI: 10.1016/j.microrel.2010.09.017 Document Type: Article

Times cited : (11)

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