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Electrochemical and Solid-State Letters

Volumn 13, Issue 5, 2010, Pages

Low specific on-resistance AlGaN/AlN/GaN high electron mobility transistors on high resistivity silicon substrate

(6) Arulkumaran, S a Vicknesh, S a Ng, G I a Liu, Z H a Bryan, M a Lee, C H a

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/ALN/GAN; BREAKDOWN VOLTAGE; DRAIN RESISTANCES; EXTRINSIC TRANSCONDUCTANCE; FIGURE OF MERIT; GATE DRAIN; HIGH RESISTIVITY; HIGH-RESISTIVITY SILICON SUBSTRATE; OHMIC RECESS; PARASITIC RESISTANCES; SOURCE RESISTANCE; SPECIFIC-ON-RESISTANCE; TI/AL/NI/AU;

DIELECTRIC RELAXATION; DRAIN CURRENT; ELECTRON MOBILITY; HETEROJUNCTION BIPOLAR TRANSISTORS; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 77949675940 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3339068 Document Type: Article

Times cited : (19)

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