High-performance AlN/GaN HEMTs on sapphire substrate with an oxidized gate insulator

IEEE Electron Device Letters

Volumn 32, Issue 12, 2011, Pages 1677-1679

  Chabak, Kelson D ^a   Walker, Dennis E ^a   Johnson, Michael R ^b   Crespo, Antonio ^a   Dabiran, Amir M ^c   Smith, David J ^b   Wowchak, Andrew M ^c   Tetlak, Stephen K ^a   Kossler, Mauricio ^a   Gillespie, James K ^a   Fitch, Robert C ^a   Trejo, Manuel ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c SVT ASSOCIATES   (United States)

Author keywords

Aluminum nitride; High electron mobility transistor (HEMT); Lattice strain; Low gate leakage; Sapphire substrate

Indexed keywords

100 GHZ; ALN; AMORPHOUS OXIDE LAYERS; EXTRINSIC TRANSCONDUCTANCE; GATE INSULATOR; GATE LEAKAGES; GATE-LEAKAGE CURRENT; HIGH-ELECTRON-MOBILITY TRANSISTOR (HEMT); LATTICE STRAIN; RF PERFORMANCE; SAPPHIRE SUBSTRATE; SAPPHIRE SUBSTRATES; T-GATES; ULTRA-THIN;

ALUMINUM NITRIDE; ELECTRON MOBILITY; LEAKAGE CURRENTS; NITRIDES; SAPPHIRE; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 81855185260     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2011.2167952     Document Type: Article

References (13)

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