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Volumn 99, Issue 3, 2011, Pages

Trap characterization of in-situ metal-organic chemical vapor deposition grown AlN/AlGaN/GaN metal-insulator-semiconductor heterostructures by frequency dependent conductance technique

(3) Freedsman, Joseph J a Kubo, Toshiharu a Egawa, Takashi a

a NAGOYA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALN; ALN LAYERS; BARRIER LAYERS; FITTING CURVES; FITTING METHOD; FITTING MODEL; FREQUENCY-DEPENDENT CONDUCTANCE; GATE VOLTAGES; HIGH FREQUENCY; IN-SITU; LOW FREQUENCY REGIONS; METAL-INSULATOR-SEMICONDUCTORS; PARALLEL CONDUCTANCE; SINGLE CURVES; TRAPPING EFFECTS;

CRYSTALS; CURVE FITTING; HETEROJUNCTIONS; INDUSTRIAL CHEMICALS; METAL INSULATOR BOUNDARIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; METALS; MIS DEVICES; ORGANIC CHEMICALS;

SEMICONDUCTOR INSULATOR BOUNDARIES;

EID: 79960791326 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3614556 Document Type: Article

Times cited : (48)

References (16)

1
- 34548238296
- Investigation and analysis of AlGaN MOS devices with an oxidized layer grown using the photoelectrochemical oxidation method
- DOI 10.1149/1.2766643
- L. H. Huang and C. T. Lee, J. Electrochem. Soc. 154, H862 (2007). 10.1149/1.2766643 (Pubitemid 47319078)
- (2007) Journal of the Electrochemical Society , vol.154 , Issue.10
- Huang, L.-H.¹ Lee, C.-T.²

2
- 42749086690
- 10.1002/pssc.200674769
- A. Kawano, S. Kishimoto, Y. Ohno, K. Maezawa, T. Mizutani, H. Ueno, T. Ueda, and T. Tanaka, Phys. Stat. Solidi C 7, 2700 (2007). 10.1002/pssc.200674769
- (2007) Phys. Stat. Solidi C , vol.7 , pp. 2700
- Kawano, A.¹ Kishimoto, S.² Ohno, Y.³ Maezawa, K.⁴ Mizutani, T.⁵ Ueno, H.⁶ Ueda, T.⁷ Tanaka, T.⁸

3
- 66749146122
- 10.1002/pssc.v5:6
- C. Ostermaier, H. C. Lee, S. Y. Hyun, S. I. Ahn, K. W. Kim, H. I. Cho, J. B. Ha, and J. H. Lee, Phys. Stat. Solidi C 5, 1992 (2008). 10.1002/pssc.v5:6
- (2008) Phys. Stat. Solidi C , vol.5 , pp. 1992
- Ostermaier, C.¹ Lee, H.C.² Hyun, S.Y.³ Ahn, S.I.⁴ Kim, K.W.⁵ Cho, H.I.⁶ Ha, J.B.⁷ Lee, J.H.⁸

4
- 79955422136
- 10.1143/JJAP.50.04DF03
- J. J. Freedsman, T. Kubo, S. L. Selvaraj, and T. Egawa, Jpn. J. Appl. Phys. 50, 04DFO3 (2011). 10.1143/JJAP.50.04DF03
- (2011) Jpn. J. Appl. Phys. , vol.50
- Freedsman, J.J.¹ Kubo, T.² Selvaraj, S.L.³ Egawa, T.⁴

5
- 0035270440
- 10.1143/JJAP.40.1194
- S. Imanaga, F. Nakmura, and H. Kawai, Jpn. J. Appl. Phys. 40, 1194 (2001). 10.1143/JJAP.40.1194
- (2001) Jpn. J. Appl. Phys. , vol.40 , pp. 1194
- Imanaga, S.¹ Nakmura, F.² Kawai, H.³

6
- 0001067856
- 10.1063/1.1303722
- T. Hashizume, E. Alekseev, and D. Pavlidis, J. Appl. Phys. 88, 1194 (2000). 10.1063/1.1303722
- (2000) J. Appl. Phys. , vol.88 , pp. 1194
- Hashizume, T.¹ Alekseev, E.² Pavlidis, D.³

7
- 0036656260
- 10.1143/JJAP.41.4481
- D. Cho, M. Shimizu, T. Ide, H. Ookita, and H. Okumura, Jpn. J. Appl. Phys. 41, 4481 (2002). 10.1143/JJAP.41.4481
- (2002) Jpn. J. Appl. Phys. , vol.41 , pp. 4481
- Cho, D.¹ Shimizu, M.² Ide, T.³ Ookita, H.⁴ Okumura, H.⁵

8
- 34247846340
- High-mobility window for two-dimensional electron gases at ultrathin AlNGaN heterojunctions
- DOI 10.1063/1.2736207
- Y. Cao and D. Jena, Appl. Phys. Lett. 90, 182112 (2007). 10.1063/1.2736207 (Pubitemid 46701175)
- (2007) Applied Physics Letters , vol.90 , Issue.18 , pp. 182112
- Cao, Y.¹ Jena, D.²

9
- 0004071496
- 3rd ed. (Wiley, Hoboken, NJ)
- K. Schroder, Semiconductor Material and Device Characterization, 3rd ed. (Wiley, Hoboken, NJ, 2006), p. 277.
- (2006) Semiconductor Material and Device Characterization , pp. 277
- Schroder, K.¹

10
- 3343024429
- 10.1063/1.345577
- M. H. Tayarani-Najaran, D. Sands, K. M. Brunson, and C. B. Thomas, J. Appl. Phys. 67, 1980 (1990). 10.1063/1.345577
- (1990) J. Appl. Phys. , vol.67 , pp. 1980
- Tayarani-Najaran, M.H.¹ Sands, D.² Brunson, K.M.³ Thomas, C.B.⁴

11
- 0035278825
- High-quality oxide/nitride/oxide gate insulator for GaN MIS structures
- DOI 10.1109/16.906436, PII S0018938301014538
- B. Gaffey, L. J. Guido, X. W. Wang, and T. P. Ma, IEEE Trans. Electron. Devices 48, 458 (2001). 10.1109/16.906436 (Pubitemid 32271159)
- (2001) IEEE Transactions on Electron Devices , vol.48 , Issue.3 , pp. 458-464
- Gaffey, B.¹ Guido, L.J.² Wang, X.W.³ Ma, T.P.⁴

12
- 0010398042
- 10.1063/1.373499
- J. Miller, X. Z. Dang, H. H. Wieder, P. M. Asbeck, and E. T. Yu, J. Appl. Phys. 87, 8070 (2000). 10.1063/1.373499
- (2000) J. Appl. Phys. , vol.87 , pp. 8070
- Miller, J.¹ Dang, X.Z.² Wieder, H.H.³ Asbeck, P.M.⁴ Yu, E.T.⁵

13
- 66749171658
- 10.1063/1.3148830
- P. Kordos, R. Stoklas, D. Gregusova, and J. Novak, Appl. Phys. Lett. 94, 223512 (2009). 10.1063/1.3148830
- (2009) Appl. Phys. Lett. , vol.94 , pp. 223512
- Kordos, P.¹ Stoklas, R.² Gregusova, D.³ Novak, J.⁴

14
- 79960757757
- for an archive of material properties.
- http:www.ioffe.rssi.ru/SVA/NSM/ for an archive of material properties.

15
- 52949085057
- 10.1063/1.2990627
- R. Stoklas, D. Gregusova, J. Novak, A Vescan, and P. Kordos, Appl. Phys. Lett. 93, 124103 (2008). 10.1063/1.2990627
- (2008) Appl. Phys. Lett. , vol.93 , pp. 124103
- Stoklas, R.¹ Gregusova, D.² Novak, J.³ Vescan, A.⁴ Kordos, P.⁵

16
- 77956174687
- 10.1109/LED.2010.2055823
- C. Kayis, J. H. Leach, C. Y. Zhu, M. Wu, X. Li, U. Ozgur, H. Morkoc, X. Yang, V. Misra, and P. H. Handel, IEEE Electron Device lett. 31, 1041 (2007). 10.1109/LED.2010.2055823
- (2007) IEEE Electron Device Lett. , vol.31 , pp. 1041
- Kayis, C.¹ Leach, J.H.² Zhu, C.Y.³ Wu, M.⁴ Li, X.⁵ Ozgur, U.⁶ Morkoc, H.⁷ Yang, X.⁸ Misra, V.⁹ Handel, P.H.¹⁰

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