AlN/GaN HEMTs with high-κ ALD HfO2 or Ta2O5 gate insulation

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 8, Issue 7-8, 2011, Pages 2420-2423

  Deen, David ^a   Storm, David ^a   Meyer, David ^a   Katzer, D Scott ^a   Bass, Robert ^a   Binari, Steven ^a   Gougousi, Theodosia ^b  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF MARYLAND BALTIMORE COUNTY   (United States)

Author keywords

Atomic layer deposition; HEMT; HfO2; Ta2O5

Indexed keywords

ALN; ATOMIC LAYER DEPOSITED; CAPACITANCE VOLTAGE; DIELECTRIC CONSTANTS; GATE CURRENT; GATE INSULATION; GATE LENGTH; HFO2; INTERFACE TRAP STATE; METAL-INSULATOR-SEMICONDUCTORS; SMALL SIGNAL; SUBMICRON;

ATOMIC LAYER DEPOSITION; CURRENT VOLTAGE CHARACTERISTICS; DRAIN CURRENT; ELECTRON MOBILITY; HAFNIUM OXIDES; INSULATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; TANTALUM; TANTALUM OXIDES;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 79960708281     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.201001071     Document Type: Article

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