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Journal of Physics Condensed Matter

Volumn 13, Issue 48, 2001, Pages 10799-10809

The influence of dopant concentration on the oxygen K-edge ELNES and XANES in yttria-stabilized zirconia

(3) Vlachos, D a,b Craven, A J a McComb, D W a

a UNIVERSITY OF GLASGOW (United Kingdom)

b UNIVERSITY OF IOANNINA (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; DOPING (ADDITIVES); ELECTRON ENERGY LOSS SPECTROSCOPY; INTERFACES (MATERIALS); STRUCTURE (COMPOSITION); YTTRIUM COMPOUNDS;

DOPANT CONCENTRATION; ELECTRON ENERGY LOSS NEAR EDGE STRUCTURE; YTTRIA STABILIZED ZIRCONIA;

ZIRCONIA;

EID: 0035803402 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/48/306 Document Type: Article

Times cited : (27)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.