Resistance switching in HfO2-based OxRRAM devices

Microelectronic Engineering

Volumn 88, Issue 7, 2011, Pages 1140-1142

  Calka, P ^a   Martinez, E ^a   Lafond, D ^a   Dansas, H ^a   Tirano, S ^b   Jousseaume, V ^a   Bertin, F ^a   Guedj, C ^a  

^a CEA LETI   (France)

^b AIX MARSEILLE UNIVERSITÉ   (France)

Author keywords

AES; HfO2; OxRRAM; Resistive switch; TEM; TiN; XPS

Indexed keywords

AES; CONDUCTIVE PATHS; ELECTRICAL MEASUREMENT; HFO2; OXRRAM; RESISTANCE SWITCHING; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE STATE; RESISTIVE SWITCH; RESISTIVITY CHANGES; TIO;

ELECTRIC VARIABLES MEASUREMENT; HAFNIUM; RANDOM ACCESS STORAGE; TITANIUM NITRIDE; X RAY PHOTOELECTRON SPECTROSCOPY;

HAFNIUM OXIDES;

EID: 79958065918     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2011.03.125     Document Type: Conference Paper

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