Grain boundaries as preferential sites for resistive switching in the HfO 2 resistive random access memory structures

Applied Physics Letters

Volumn 100, Issue 12, 2012, Pages

  Lanza, M ^a   Zhang, K ^b   Porti, M ^a   Nafra, M ^a   Shen, Z Y ^b   Liu, L F ^b   Kang, J F ^b   Gilmer, D ^c   Bersuker, G ^c  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^b PEKING UNIVERSITY   (China)

^c SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTIVE ATOMIC FORCE MICROSCOPES; CONDUCTIVE FILAMENTS; HIGH DENSITY; IN-SITU; METAL-INSULATOR-METAL STRUCTURES; NANOMETRIC RESOLUTION; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING;

ATOMIC FORCE MICROSCOPY; GRAIN BOUNDARIES; SWITCHING SYSTEMS;

HAFNIUM OXIDES;

EID: 84859550579     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3697648     Document Type: Article

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