Acceptor formation in Mg-doped, indium-rich GaxIn1-xN: Evidence for p-type conductivity

Nanoscale Research Letters

Volumn 7, Issue , 2012, Pages

  Balkan, Naci ^a   Tiras, Engin ^b   Erol, Ayse ^c   Gunes, Mustafa ^c   Ardali, Sukru ^b   Arikan, M Cetin ^c   Lagarde, Dalphine ^d   Carrère, Helene ^d   Marie, Xavier ^d   Gumus, Cebrail ^a,e  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b ANADOLU UNIVERSITY   (Turkey)

^c ISTANBUL UNIVERSITY   (Turkey)

^d INSA   (France)

^e CUKUROVA UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM ALLOYS; INDIUM; INDIUM ALLOYS; MAGNESIUM ALLOYS; PHOTOCONDUCTIVITY; SEMICONDUCTING FILMS; SEMICONDUCTOR ALLOYS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE DISTRIBUTION;

HALL MEASUREMENTS; ILLUMINATION INTENSITY; LONGITUDINAL OPTICAL PHONONS; P TYPE CONDUCTIVITY; SPECTRAL PHOTOCONDUCTIVITY; TEMPERATURE DEPENDENCE; THERMAL REGENERATION; UNDOPED MATERIAL;

BINDING ENERGY;

EID: 84871003741     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1186/1556-276X-7-574     Document Type: Article

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