High-quality InN film grown on a low-temperature-grown GaN intermediate layer by plasma-assisted molecular-beam epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 41, Issue 5 B, 2002, Pages

  Higashiwaki, Masataka ^a   Matsui, Toshiaki ^a  

^a NATIONAL INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY   (Japan)

Author keywords

Atomic force microscopy (AFM); Carrier concentration; Hall measurement; Indium nitride (InN); Mobility; Plasma assisted molecular beam epitaxy (PAMBE)

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CARRIER MOBILITY; ELECTRIC PROPERTIES; FILM GROWTH; GALLIUM NITRIDE; HALL EFFECT; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; MORPHOLOGY; PLASMA APPLICATIONS; SEMICONDUCTING INDIUM COMPOUNDS; SURFACE ROUGHNESS;

BUFFER LAYERS; HALL MOBILITY;

SEMICONDUCTING FILMS;

EID: 0037095548     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.l540     Document Type: Article

References (8)