Photoreflectance of InN and InN:Mg layers: An evidence of Fermi level shift toward the valence band upon Mg doping in InN

Applied Physics Letters

Volumn 93, Issue 13, 2008, Pages

  Kudrawiec, R ^a   Suski, T ^b   Serafinczuk J ^a   Misiewicz, J ^a   Muto, D ^c   Nanishi, Y ^c  

^a WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^b INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^c RITSUMEIKAN UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; ELECTRIC CURRENTS; ELECTRIC FIELDS; FERMI LEVEL; FERMIONS; RESONANCE;

BAND BENDING; FERMI LEVEL SHIFT; FRANZ-KELDYSH OSCILLATIONS; INN LAYERS; MG DOPING; MG-DOPED; PHOTOREFLECTANCE; PR SPECTRA;

MAGNESIUM PRINTING PLATES;

EID: 53349101799     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2995989     Document Type: Article

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