Superconductivity in heavily compensated Mg-doped InN

Applied Physics Letters

Volumn 94, Issue 14, 2009, Pages

  Tiras, E ^a,b   Gunes, M ^a   Balkan, N ^a   Airey, R ^c   Schaff, W J ^d  

^a UNIVERSITY OF ESSEX   (United Kingdom)

^b ANADOLU UNIVERSITY   (Turkey)

^c UNIVERSITY OF SHEFFIELD   (United Kingdom)

^d School of Operations Research and Industrial Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER DENSITIES; ELECTRON DENSITIES; HALL RESISTANCES; INDIUM DOTS; JOSEPHSON JUNCTIONS; MATRIXES; METAL TRANSITIONS; MG-DOPED; MOTT TRANSITIONS; NANO-SIZED; PHASE TRANSITION TEMPERATURES; PLAUSIBLE MECHANISMS; THREE-DIMENSIONAL (3D); TWO-DIMENSIONAL; UNIFORM DISTRIBUTIONS;

CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRIC RESISTANCE; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; PHASE TRANSITIONS; SECONDARY BATTERIES; TECHNETIUM; THREE DIMENSIONAL;

SUPERCONDUCTIVITY;

EID: 64349115769     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3116120     Document Type: Article

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