Transition from electron accumulation to depletion at InGaN surfaces

Applied Physics Letters

Volumn 89, Issue 20, 2006, Pages

  Veal, T D ^a   Jefferson, P H ^a   Piper, L F J ^a   McConville, C F ^a   Joyce, T B ^b   Chalker, P R ^b   Considine, L ^c   Lu, Hai ^d   Schaff, W J ^d  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF LIVERPOOL   (United Kingdom)

^c THOMAS SWAN AND CO LTD   (United Kingdom)

^d Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; ELECTRON TRANSITIONS; ELECTRONS; FERMI LEVEL; OXIDATION; X RAY PHOTOELECTRON SPECTROSCOPY;

CHARGE NEUTRALITY; COMPOSITION DEPENDENCE; ELECTRON ACCUMULATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 33751098762     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2387976     Document Type: Article

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